EFFECT OF DOPING THIOUREA IN CdO THIN FILMS FOR ELECTRONIC APPLICATIONS

Thiourea (Th)-doped CdO thin films were deposited on glass and crystalline p-type Si (100) substrates for various Th doping concentrations (0.3, 0.5 0.7 at.%) using spin coating method. Some structural parameters, such as the crystallite size, lattice constant, dislocation density ([Formula: see text]) strain in obtained from XRD analysis which polycrystalline structure with cubic nature (111) preferential orientation was confirmed. film has not shown any change crystal phase after doping. The optical study emerged that caused important changes transmittance, absorbance reflectance spectra. transmittance above 80% range 720[Formula: text]nm to 800[Formula: is 0.3% Th-doped films. rectifying behavior increases increasing content while CdO/p-Si heterojunction exhibits low character.